Piezoresistive Silicon Pressure Sensor Φ10mm PC7
Features
■Pressure ref.: gauge pressure, absolute pressure
■Ranges: 1MPa…60MPa
■Input impedance: 2kΩ~5kΩ
■Zero output: ±30mV
PC7 Φ10mm piezoresistive silicon sensor,oil filling pressure sensor,small diameter sensor, pin connection sensor
We are the manufacturer which produce the piezoresistive silicon pressure sensor with high stability and CE approved.
Product Parameters
Performance parameters | |||
Pressure range | 1MPa~40MPa | ||
Pressure reference | Absolute pressure, Sealed gauge pressure | ||
Excitation | 1.5mA recommended for constant current 5V recommended for constant voltage | ||
Operating temp. | -40℃~125℃ | ||
Storage temp. | -40℃~125℃ | ||
Zero output | ±30mV | ||
Span output | ≥60mV | ||
Zero temp. coefficient | 10%FS | ||
Span temp. coefficient | 10%FS | ||
Impedance | (2~6)kΩ | ||
Insulation resistance | ≥200MΩ/250VDC | ||
Long-term drift | ≤0.2%FS/year | ||
Non-linearity | ≤0.25%FS(BFSL) | ||
Repeatability | ≤0.05%FS | ||
Lead out mode | Pin |
Structural performance parameters | ||
Diaphragm material | 316L | |
Housing material | 316L | |
Oil filling | Silicon oil | |
Sealing ring | NBR or fluorine rubber |
Structure & dimension (in mm) | |
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Electrical connection (in mm) |
5 pin (5p)
| Pin Definition 1,5 Excitation-(IN-) 2 Output+(OUT+) 3 Excitation+(IN+) 4 Output-(OUT-)
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Pressure range selection | |||||||
Code | Pressure reference | Pressure range | Overpressure | O-ring | |||
1M | A、S | 0~1MPa | 200%FS | NBR | |||
1.6M | A、S | 0~1.6MPa | 200%FS | NBR | |||
2.5M | A、S | 0~2.5MPa | 200%FS | NBR | |||
4M | A、S | 0~4MPa | 200%FS | NBR | |||
6M | A、S | 0~6MPa | 150%FS | NBR | |||
10M | A、S | 0~10MPa | 150%FS | NBR | |||
16M | S | 0~16MPa | 150%FS | NBR | |||
25M | S | 0~25MPa | 150%FS | NBR | |||
40M | S | 0~40MPa | 150%FS | NBR |
Note: G: Gauge pressure, A: Absolute pressure, S: Sealed gauge pressure
Production process
Testing Equipment
Certificate
Company profile
Nanjing Wotian Technology Co., Ltd. was established in 2005. It is an outstanding top sensor mkanufacturing enterprise in Jiangning District. The company was rated as Nanjing Engineering Technology Research Center and Nanjing. Municipal Engineering Research Center, Nanjing Enterprise Technology Center, Nanjing Postdoctoral Innovation Demonstration Base; is the unit that formulated the national standards for "Silicon Piezoresistive Pressure Sensitive Chips" and "Silicone Pressure Sensors". It is the leading domestic manufacturer of pressure sensors, with core technology of diffused silicon pressure sensor pressure transmitter, level sensor and temperature sensor and existing staff 305. The annual production of pressure sensors is more than 2 million. The products have been exported to more than 70 countries and regions. Nanjing Wotian was awarded the honorary title of "Sensor Application Program Demonstration Enterprise" by the Ministry of Industry and Information Technology in 2019. "Creating value for customers" is the goal that enterprises always pursue. As leading manufacturer in the domestic pressure sensor industry, the company will revitalize China's pressure sensor business as its own responsibility, work diligently, step by step, strive to make pressure sensors better, and provide customers with cost-effective sensors. Nanjing Wotian Technology Co., Ltd. has passed ISO9001-2015 quality management system certification and TS16949 certification for the automotive industry.
Company advantage
Mass production
We have one production center in Nanjing and one production center in Anshan with 20,000㎡plant and 170 units of production equipments. The main annual capacity of sensors is about 2,000,000 pieces.
Imported equipments
We imported 20 sets of pressure controller and 150 units of testing ovens to our production line.
Informatization management
We have the information management system of CRM, PLM, ERP, MES and DINGDING etc.
Comprehensive testing
We have our own lab and testing equipment such as lightning stroke, surging, static electricity, vibration, high-low temperature impact test and helium mass-spectrum leak detection.